FTD1499 datasheet(1/2 Pages) FS

Part #	FTD1499

Description	TRANSISTOR (NPN)

PDF	2 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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2013. 04. 05

1/2

SEMICONDUCTOR

TECHNICAL DATA

FTD1499

Revision No : 0

FTD1499

TRANSISTOR (NPN)

FEATURES

TO-220F

A

B

C

D

E

F

G

H

1 52 MAX

J

K

L

M

L

N

O

Q

R

1

2

3

M

DIM

MILLIMETERS

10 16

0 20

+

_

15 00

0 20

+

_

3 00

0 20

+

_

0 625±0 125

3 50 typ

0 45

0 1

+

_

3 80

0 2

+

_

13 20

0 20

+

_

2 54

0 2

+

_

4 50

0 2

+

_

6 36

0 3

+

_

2 70

0 20

+

_

2 7 typ

16 80

0 4

+

_

1. Base

2. Collector

3. Emitter

Extremely Satisfactory Linearity of the Forward Current

Transfer Ratio hFE

Wide Safe Operation Area

High Transition Frequency fT

Full-pack Package which can be Installed to the Heat Sink with

One Screw.

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

5

A

PC

Collector Power Dissipation

2

W

TJ

Junction temperature

150

℃

Tstg

Storage Temperature

-55to+150

℃

ELECTRICAL

CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

100

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB

0

1

0

=

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

5

V

Collector cut-off current

ICEO

VCE=50V,IB 0

=

50

µA

Collector cut-off current

ICBO

VCB=100V,IE 0

=

50

µA

Emitter cut-off current

IEBO

VEB=3V,IC 0

=

50

µA

hFE(1)

VCE=5V,IC=20mA

20

hFE(2)

VCE=5V,IC

0

6

A

1

=

200

DC current gain

hFE(3)

VCE=5V,IC=3A

20

Collector-emitter saturation voltage

VCE(sat)

IC=3A,IB

A

3

.

0

=

2

V

Base-emitter voltage

VBE

VCE=5V,IC

A

3

=

1.8

V

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

90

pF

Transition frequency

fT

VCE = 5 V, IC = 0.5 A, f = 1 MHz

20

MHz

CLASSIFICATION OF hFE2

P

Q

k

n

a

R

Range

0

2

-

0

1

0

2

1

-

0

6

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