COLLECTOR

3

1

BASE

2

EMITTER

SEMICONDUCTOR

TECHNICAL DATA

FTD4240

2014. 07. 01

1/5

Revision No : 0

SOT–23

1

3

2

General Purpose Transistors

40V,2A Low VCE(sat) NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

40

V

Collector–Base Voltage

40

V

Emitter–Base Voltage

5.0

V

Collector Current — Continuous

2

A

total power dissipation

D

Junction temperature

150

°C

Storage temperature

-65 ~+150

°C

THERMAL CHARACTERISTICS

ORDERING INFORMATION

Symbol

Parameter

Conditions

Value

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air;note 1

in free air;note 2

417

K/W

260

K/W

• Low collector-emitter saturation voltage

• High current capability

• Improved device reliability due to reduced heat generation

• Replacement for SOT89/SOT-223 standard packaged transistors.

• Supply line switching circuits

• Battery management applications

• DC/DC converter applications

• Strobe flash units

• Heavy duty battery powered equipment (motor and lamp drivers).

We declare that the material of product compliance with RoHS requirements.

•

P

0.3

W

FTD4240

ZE

3000/Tape & Reel

Device

Marking

Shipping

DESCRIPTION

APPLICATIONS

FEATURES

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

•

1.Device mounted on a printed-circuit board,single sided copper,tinplated and standard footprint.

Notes: