FTD2114K datasheet(1/4 Pages) FS

Part #	FTD2114K

Description	Epitaxial planar type NPN silicon transistor

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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Epitaxial planar type

NPN silicon transistor

Features

1) High DC current gain.

hFE = 1200 (Typ.)

2) High emitter-base voltage.

VEBO =12V (Min.)

3) Low VCE(sat).

VCE (sat) = 0.18V (Typ.)

(IC / IB = 500mA / 20mA)

1

BASE

2

EMITTER

COLLECTOR

3

Absolute maximum ratings (Ta=25

°C)

Parameter

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

25

V

A(DC)

W

C

20

12

0.5

A(Pulse)

1

0.2

150

−55∼+150

Symbol

Limits

Unit

Single pulse Pw

=100ms

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

fT

Cob

Min.

25

20

12

−

0.18

350

8.0

−

0.5

0.4

−

V

IC

=10µA

IC

=1mA

IE

=10µA

VCB

=20V

VEB

=10V

IC/IB

=500mA/20mA

VCE

=10V, IE=−50mA, f=100MHz

VCB

=10V, IE=0A, f=1MHz

V

µA

hFE

820

−

2700

VCE

=3V, IC=10mA

−

V

MHz

pF

Ron

−

0.8

−

IB

=1mA, Vi=100mV(rms), f=1kHz

pF

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Output On-resistance

Measured using pulse current

hFE Values Classification, Device Marking and Ordering Information

Device

hFE

Marking

Shipping

FTD2114KVLT1G

820~1800

BV

3000/Tape&Reel

FTD2114KVLT3G

820~1800

BV

10000/Tape&Reel

FTD2114KWLT1G

1200~2700

BW

3000/Tape&Reel

FTD2114KWLT3G

1200~2700

BW

10000/Tape&Reel

4) We declare that the material of product compliance with RoHS requirements.

SOT– 23

1

3

2

SEMICONDUCTOR

TECHNICAL DATA

FTD2114K

2008. 02. 18

1/4

Revision No : 0

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