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FTD669A Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTD669A
Description  TRANSISTOR (NPN)
PDF  2 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTD669A Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTD669A Datasheet HTML 1Page - First Silicon Co., Ltd FTD669A Datasheet HTML 2Page - First Silicon Co., Ltd  
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2012. 04. 27
2/2
FTD669/A
Revision No : 0
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
3
1.0
0.3
0.01
0.03
0.1
3
30
10
300
0
0
1
1
Collector to emitter voltage VCE (V)
Area of Safe Operation
DC Operation(TC = 25°C)
(13.3 V, 1.5 A)
(40 V, 0.5 A)
(120 V, 0.04 A)
(160 V, 0.02A)
FTD669A
FTD669
3.5
5.5
4.0
4 5
5 0
Typical Output Characteristecs
TC = 25°C
P
C
= 20
W
IB = 0
0.5 mA
1.0
1.5
2.0
2.5
3.0
1.0
0.8
0.6
0.4
0.2
0
10
20
Collector to emitter voltage VCE (V)
50
40
30
Typical Transfer Characteristics
500
200
100
50
20
10
5
2
1
0
0 2
0.4
0.6
0.8
1.0
Base to emitter voltage VBE (V)
VCE = 5 V
300
250
200
150
100
50
1
1
30
300
100
10
3
Collector current IC (mA)
1,000 3,000
DC Current Transfer Ratio
vs. Collector Current
VCE = 5 V
Ta = 75
°C
–25
25
1.2
1.0
0.8
0.6
0.4
0
0.2
1
3
30
300
10
100
1,000
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current IC (mA)
IC = 10 IB
1.2
1.0
0.8
0.6
0.4
0
0.2
1
3
30
300
10
100
1,000
Base to Emitter Satura ion Voltage
vs. Collector Current
Collector current IC (mA)
IC = 10 IB
75
25
TC = –25
°C
240
200
160
120
80
40
0
0
0
3
0
1
1,000
100
30
Collector current I
C
(mA)
Gain Bandwidth Product
vs. Collector Current
VCE = 5 V
Ta = 25°C
200
100
50
20
10
5
2
1
10
50
20
5
2
Collector to base voltage VCB (V)
100
Collector Output Capacitance
vs. Collector to Base Voltage
f = 1 MHz
IE = 0



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