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FTD880 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTD880 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  SEMICONDUCTOR TECHNICAL DATA FTD880 2011. 11. 16 1/2 Revision No : 0 FTD880 TRANSISTOR (NPN) FEATURES Low Frequency Power Amplifier Complement to FTB834 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation(Ta=25℃) TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=50mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE =100µA, IC=0 7 V Collector cut-off current ICBO VCB=60V, IE=0 100 µA Emitter cut-off current IEBO VEB=7V, IC=0 100 µA DC current gain hFE VCE=5V, IC=500mA 60 300 Collector-emitter saturation voltage VCE (sat) IC=3A, IB=300mA 1 V Base-emitter voltage VBE IC=0.5A, VCE= 5V 1 V Transition Frequency f T VCE=5 V, IC=500mA 3 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 70 pF Turn on time ton 0.8 µs Storage time t s 1.5 µs Fall time t f IB1=-IB2=0.2A, IC=2A VCC=30V, PW=20µs 0.8 µs CLASSIFICATION OF hFE R G Y O k n a R Range 60-120 100-200 150-300 3 A 7 V 1.5 W DIM MILLIMETERS TO-220AB A B C D E F H J N O 0.8 ± 0.1 2.7 ± 0.2 2.54 ± 0.2 13.6 ± 0.2 3.8 ± 0.2 10.15 ± 0.15 4.5 ± 0.2 2.7 ± 0.2 15.30 MAX 1.3+0.1/-0.15 0.4 ± 0.15 A F B J E O C H N N D P P 1 BASE 2 COLLECTOR 3 EMITTER 1 2 3 Collector Dissipation(Tc=25℃) 30 W |
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