2012. 08. 28

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SEMICONDUCTOR

TECHNICAL DATA

MJD31C

Revision No : 0

D-PAK (TO-252)

DIM

MILLIMETERS

A

B

C

D

F

H

I

J

L

6 50 ± 0 2

5 60 ± 0 2

5 20 ± 0 2

1 50 ± 0 2

2 70 ± 0 2

2 30 ± 0 1

1 00 MAX

2 30 ± 0 2

0 5 ± 0 1

0 50 ± 0 10

E

1 6 ± 0 2

O

A

C

I

J

H

F

F

L

1

2

3

1 BASE

2 COLLECTOR

3 EMITTER

0 95 MAX

Q

MJD31C

TRANSISTOR (NPN)

FEA TURES

Designed for General Purpose Amplifier and

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP31 and TIP32 Series

Low Speed Switching Applications.

Symbol

Parameter

Max

Unit

Collector-Base Voltage

100

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

5

V

Collector Current -Continuous

3

A

Collector Power Dissipation

1.25

W

Junction Temperature

150

℃

Storage Temperature

-65-150

℃

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

100

V

Collector-emitter breakdown voltage *

100

V

Emitter-base breakdown voltage

5

V

Collector cut-off current

20

μA

Collector cut-off current

50

μA

Emitter cut-off current

1

mA

25

DC current gain

15

75

Collector-emitter saturation voltage

1.2

V

Base-emitter voltage

1.8

V

Transition frequency

3

* Pulse Test: PW

≤300µs, Duty Cycle≤2%.