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MMBT6427 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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MMBT6427 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 6 page ![]() 2 EMITTER 3 COLLECTOR 1 BASE SOT–23 Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V EBO 12 Vdc Collector Current — Continuous I C 500 mAdc THERMAL CHARACTERISTICS x a M l o b m y S c i t s i r e t c a r a h C Unit Total Device Dissipation FR– 5 Board, (1) PD 225 mW TA = 25°C 8 . 1 C ° 5 2 e v o b a e t a r e D mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W P n o i t a p i s s i D e c i v e D l a t o T D 300 mW Alumina Substrate, (2) TA = 25°C 4 . 2 C ° 5 2 e v o b a e t a r e D mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ , Tstg –55 to +150 °C DEVICE MARKING MMBT6427 = 1V ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V (BR)CEO 40 — Vdc (I C = 10 mAdc, V BE = 0) Collector–Base Breakdown Voltage V (BR)CBO 40 — Vdc (I C = 100 µAdc, I E = 0) Emitter–Base Breakdown Voltage V (BR)EBO 12 — Vdc (I E = 10 µAdc, I C = 0) Collector Cutoff Current I CES — 1.0 µAdc ( V CE = 25Vdc, I B = 0) Collector Cutoff Current I CBO — 50 nAdc ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current I EBO — 50 nAdc ( V EB = 10Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. . Ordering Information Device Marking Shipping MMBT6427 1V 3000/Tape&Reel We declare that the material of product compliance with RoHS requirements. 1 3 2 SEMICONDUCTOR TECHNICAL DATA MMBT6427 2018. 09. 18 1/6 Revision No : 0 |
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