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Preliminary specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com

Contact Details (USA): Tel: +1 (408) 850 5790

Fax: +1 (408) 850 5766

Website: www.filcs.com

FMS2013

SPDT GaAs High Isolation Absorptive Switch DC-4 GHz

Features:

♦ Available as RF Known Good Die

♦ Excellent low control voltage performance

♦ Excellent harmonic performance

♦ Very high isolation >49dB typ. up to 4GHz

♦ Very low Tx Insertion loss <1.0 dB at 4GHz

Description and Applications:

The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch

designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated

using the Filtronic FL05 0.5

µm switch process technology which offers market leading performance

optimised for switch applications.

Parameter

Test Conditions

Min

Typ

Max

Units

Tx Insertion Loss

4GHz

1.0

dB

Rx Insertion Loss

4GHz

1.0

dB

Return Loss

4GHz

15

dB

VSWR On State

4GHz

1:1.3

VSWR Off State

4GHz

1:1.4

Isolation at 4 GHz

4GHz

49

dB

2nd Harmonic Level

3GHz, Pin = 21dBm, Vctrl = 3V

3GHz, Pin = 27dBm, Vctrl = 5V

-72

-68

dBc

dBc

Switching speed

Pin = 21dBm, 10% to 90% RF

30

ns

Note: External DC blocking capacitors are required on all RF ports (typ: 47pF).

Functional Schematic

RFIN

V2

V1

RF02

RF01

RFIN

V2

V1

RF02

RF01