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BGS12WN6 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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BGS12WN6 Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 16 page ![]() BGSWN Wideband SPDT Diversity Switch with High Switching Speed Maximum Ratings Maximum Ratings Table : Maximum Ratings at TA = 25 ◦C, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Frequency Range ) f . – GHz – Supply voltage VDD – . V – Storage temperature range TSTG - – ◦ C – RF input power at all RF ports PRF,max – – dBm CW / VSWR : / 50 Ω ESD capability, CDM ) VESD,CDM - – + kV – ESD capability, HBM ) VESD,HBM - – + kV – ESD capability RF ports ) VESD,RF - – + kV Each single RF-in/out port ver- sus GND, with nH shunt in- ductor - – + kV Each single RF-in/out port ver- sus GND, with nH shunt in- ductor Junction temperature Tj – – ◦ C – Thermal resistance junction - soldering point RthJS – – K/W – Maximum DC-voltage on RF ports and RF-Ground VRFDC – V No DC voltages allowed on RF- Ports )There is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be V. )Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS- . Simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. )Human Body Model ANSI/ESDA/JEDEC JS- (R = 1.5 kΩ, C = 100 pF). )IEC -- (R = 330 Ω, C = 150 pF), contact discharge. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may a ect device reliability and life time. Functionality of the device might not be given under these conditions. Datasheet Revision . - - |
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