MJD210 datasheet(1/6 Pages) ONSEMI

Part #	MJD210

Description	Complementary Plastic Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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Motorola Bipolar Power Transistor Device Data

Complementary

Plastic Power Transistors

NPN/PNP Silicon DPAK For Surface Mount

Applications

. . . designed for low voltage, low–power, high–gain audio amplifier applications.

• Collector–Emitter Sustaining Voltage —

VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

• High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc

= 45 (Min) @ IC = 2 Adc

= 10 (Min) @ IC = 5 Adc

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“–1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

= 0.75 Vdc (Max) @ IC = 2.0 Adc

• High Current–Gain — Bandwidth Product — fT = 65 MHz (Min) @ IC = 100 mAdc

• Annular Construction for Low Leakage — ICBO = 100 nAdc @ Rated VCB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Base Voltage

VCB

40

Vdc

Collector–Emitter Voltage

VCEO

25

Vdc

Emitter–Base Voltage

VEB

8

Vdc

Collector Current — Continuous

Peak

IC

5

10

Adc

Base Current

IB

1

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

PD

12.5

0.1

Watts

W/

_C

Total Device Dissipation @ TA = 25_C*

Derate above 25

_C

PD

1.4

0.011

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient*

R

θJC

R

θJA

10

89.3

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 10 mAdc, IB = 0)

VCEO(sus)

25

—

Vdc

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0)

(VCB = 40 Vdc, IE = 0, TJ = 125_C)

ICBO

—

100

nAdc

Emitter Cutoff Current (VBE = 8 Vdc, IC = 0)

IEBO

—

100

nAdc

* When surface mounted on minimum pad sizes recommended.

(continued)

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle [ 2%.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJD200/D

MJD200

MJD210

CASE 369A–13

SILICON

POWER TRANSISTORS

5 AMPERES

25 VOLTS

12.5 WATTS

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

inches

mm

NPN

PNP

REV 1

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