MJD200 MJD210

4

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

0.01

0.02

0.05

1

2

5

10

20

50

100

200

0.1

0.5

0.2

1

0.2

0.1

0.05

R

θJC(t) = r(t) θJC

R

θJC = 10°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

0 (SINGLE PULSE)

Figure 8. Thermal Response

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.01

30

2

5

0.1

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

Figure 9. Active Region Safe Operating Area

500

µs

dc

1

3

1 ms

20

10

7

5

3

2

1

0.3

100

µs

TJ = 150°C

5 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 9 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in Fig-

ure 8. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

Case 369–05 may be ordered by adding a “–1” suffix to the

device title (i.e. MJD200–1)

200

VR, REVERSE VOLTAGE (VOLTS)

20

40

70

100

30

Figure 10. Capacitance

50

20

10

6

4

2

1

0.4

0.6

TJ = 25°C

MJD200 (NPN)

MJD210 (PNP)

Cob

Cib