MJD41C datasheet(4/6 Pages) ONSEMI

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MJD41C (NPN) MJD42C (PNP)

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t, TIME (ms)

0.01

0.05

100

200

500

0.1

0.5

0.2

1000

0.03

0.3

300

0.02

2.5 A

Figure 7. Collector Saturation Region

IB, BASE CURRENT (mA)

1.2

0.4

0.8

TJ = 25°C

1.6

IC = 1 A

Figure 8. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Cob

0.5

0.2

0.1

0.05

RqJC(t) = r(t) RqJC

RqJC = 6.25°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

Figure 9. Thermal Response

0.5

D = 0.5

5 A

1000

500

300

200

100

300

100

200

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

TJ = 25°C

Cib

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.01

100

0.3

0.1

0.03

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

Figure 10. Maximum Forward Bias

Safe Operating Area

TC = 25°C SINGLE PULSE

TJ = 150°C

0.5

1ms

MJD41C, 42C

0.05

100

CURVES APPLY BELOW RATED VCEO

5ms

500

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 10 is based on TJ(pk) = 150

_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 9. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

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