AM29LV033MU datasheet(51/56 Pages) AMD

51 / 56 page

November 11, 2002

Am29LV033MU

ADV ANCE

I N FO RMAT I O N

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V V

CC, 100,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90

°C, V

CC = 3.0 V, 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table

10 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 100,000 cycles.

LATCHUP CHARACTERISTICS

Note: Includes all pins except V

CC. Test conditions: VCC = 3.0 V, one pin at a time.

TSOP PIN AND BGA PACKAGE CAPACITANCE

Notes:

1. Sampled, not 100% tested.

2. Test conditions T

A = 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.4

sec

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

TBD

sec

Effective Write Buffer Program Time, Per Byte

TBD

µs

Excludes system level

overhead (Note 5)

Byte Program Time

TBD

µs

Accelerated Effective Byte Program Time

TBD

µs

Chip Program Time (Note 3)

TBD

sec

Description

Min

Max

Input voltage with respect to V

SS on all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to V

SS on all I/O pins

–1.0 V

CC + 1.0 V

CC Current

–100 mA

+100 mA

Parameter Symbol

Parameter Description

Test Setup

Typ

Max

Unit

Input Capacitance

IN = 0

TSOP

7.5

BGA

4.2

5.0

OUT

Output Capacitance

OUT = 0

TSOP

8.5

BGA

5.4

6.5

IN2

Control Pin Capacitance

IN = 0

TSOP

7.5

BGA

3.9

4.7

Parameter Description

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C10

Years

125

°C20

Years

AM29LV033MU Datasheet(PDF) 51 Page - Advanced Micro Devices

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