LP4935T1G datasheet(2/5 Pages) LRC

2 / 5 page

LP4935T1G

Dual P-Channel MOSFET

5. ELECTRICAL CHARACTERISTICS

Drain-Source Breakdown Voltage

(ID =-250µA, VGS =0V)

Zero Gate Voltage Drain Current

(VDS =-24V, VGS =0V)

(VDS =-24V, VGS =0V,TJ = 55°C)

Gate-Body Leakage

(VDS = 0 V, VGS = ±20 V)

Gate-Source Threshold Voltage

(VDS = VGS , ID = 250 uA)

On-State Drain Current

(VGS =-10V, VDS =-5V)

Drain-Source On-Resistance

(VGS =-10V, ID =-4.1A)

(VGS =-4.5V, ID =-3A)

Forward Transconductance

(VDS =-5V, ID =-4A)

Diode Forward Voltage

(IS =-1A,VGS =0V)

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge(10V)

Total Gate Charge(4.5V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Body Diode Reverse Recovery Time

(IF =-4A, dI/dt=100A/µs)

Body Diode Reverse Recovery Charge

(IF =-4A, dI/dt=100A/µs)

BVDSS

Symbol

Unit

Static

VGS(th)

-1

-1.4

-2.5

(VGS =0V, VDS

=-15V, f=1MHz)

Ciss

515

660

725

Coss

100

130

Crss

110

Dynamic

Characteristic

(VGS =-10V, VDS

=-15V, RL =3.6

Ω,RGEN =3Ω)

td(on)

td(off)

IGSS

±100

-1

RDS(on)

mΩ

IDSS

µA

ID(on)

gfs

Min.

Typ.

-0.77

-1

VSD

-5

Max.

9.4

-30

-2

-25

trr

Qrr

11.3

(VGS =-10V, VDS

=-15V, ID =-4A)

18.7

Gate resistance

(VGS =0V, VDS =0V, f=1MHz)

3.5

7.5

11.5

Qgs

2.7

Qgd

3.3

Leshan Radio Company, LTD.

2/5

Rev.B Nov. 2019

LP4935T1G Datasheet(PDF) 2 Page - Leshan Radio Company

LP4935T1G Datasheet(HTML) 2 Page - Leshan Radio Company

Html Pages

1 2 3 4 5

Datasheet Download

Link URL