LP4935T1G datasheet(4/5 Pages) LRC

Part #	LP4935T1G

Description	P-Channel MOSFET Low RDS(on) trench technology.

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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4 / 5 page

Dual P-Channel MOSFET

6.ELECTRICAL CHARACTERISTICS CURVES(Con.)

Leshan Radio Company, LTD.

4/5

02468

g (nC)

Figure 7: Gate-Charge Characteristics

200

400

600

800

-V

DS (Volts)

Figure 8: Capacitance Characteristics

Ciss

Coss

Crss

VDS=-15V

ID=-4A

0.0001

0.01

100

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

TA=25°C

0.0

0.1

1.0

10.0

100.0

0.01

0.1

100

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

µs

10s

1ms

RDS(ON)

limited

TJ(Max)=150°C

TA=25°C

100

µs

10ms

0.001

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJA

Ton

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJA=125°C/W

LP4935T1G

Rev.B Nov. 2019

LP4935T1G Datasheet(PDF) 4 Page - Leshan Radio Company

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