LND150 datasheet(2/16 Pages) MICROCHIP

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LND150/LND250

DS20005454A-page 2

 2018 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS†

Drain-to-Source Voltage ...................................................................................................................................... BVDSX

Drain-to-Gate Voltage .......................................................................................................................................... BVDGX

Gate-to-Source Voltage ......................................................................................................................................... ±20V

Operating Ambient Temperature, TA ...................................................................................................... –55°C to 150°C

Storage Temperature, TS ....................................................................................................................... –55°C to 150°C



† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at those or any other conditions above those indicated in the

operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods

may affect device reliability.



DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless

otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle

Parameter

Sym.

Min. Typ. Max.

Unit

Conditions

Drain-to-Source Breakdown Voltage

BVDSX

500

—

VGS = –10V, ID = 1 mA

Gate-to-Source Off Voltage

VGS(OFF)

–1

—

–3

VGS = 25V, ID = 100 nA

Change in VGS(OFF) with Temperature

∆VGS(OFF) —

—

mV/°C VGS = 25V, ID = 100 nA

(Note 1)

Gate Body Leakage Current

IGSS

—

100

VGS = ±20V, VDS = 0V

Drain-to-Source Leakage Current

ID(OFF)

—

100

VGS = –10V, VDS = 450V

—

100

µA

VDS = 0.8V Maximum rating,

VGS = –10V, TA= 125°C

(Note 1)

Saturated Drain-to-Source Current

IDSS

—

VGS = 0V, VDS = 25V

Static Drain-to-Source On-State Resistance

RDS(ON)

—

850 1000

Ω

VGS = 0V, ID = 0.5 mA

Change in RDS(ON) with Temperature

∆RDS(ON)

—

1.2

%/°C

VGS = 0V, ID = 0.5 mA

(Note 1)

Note 1: Specification is obtained by characterization and is not 100% tested.

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