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LND150 Datasheet(PDF) 3 Page - Microchip Technology |
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LND150 Datasheet(HTML) 3 Page - Microchip Technology |
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3 / 16 page ![]() AC ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = 25°C unless otherwise specified. Specification is obtained by characterization and is not 100% tested. Parameter Sym. Min. Typ. Max. Unit Conditions Forward Transconductance GFS 1 2 — mmho VDS = 0V, ID = 1 mA Input Capacitance CISS — 7.5 10 pF VGS = –10V, VDS = 25V, f = 1 MHz Common Source Output Capacitance COSS — 2 3.5 pF Reverse Transfer Capacitance CRSS — 0.5 1 pF Turn-On Delay Time td(ON) — 0.09 — ns VDD = 25V, ID = 1 mA, RGEN = 25Ω Rise Time tr — 0.45 — ns Turn-Off Delay Time td(OFF) — 0.1 — ns Fall Time tf — 1.3 — ns DIODE PARAMETER Diode Forward Voltage Drop VSD — — 0.9 V VGS = –10V, ISD = 1 mA (Note 1) Reverse Recovery Time trr — 200 — ns VGS = –10V, ISD = 1 mA Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty cycle. TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE Operating Ambient Temperature TA –55 — +150 °C Storage Temperature TS –55 — +150 °C PACKAGE THERMAL RESISTANCE 3-lead TO-92 JA — 132 — °C/W 3-lead SOT-23 JA — 203 — °C/W 3-lead SOT-89 JA — 133 — °C/W THERMAL CHARACTERISTICS Package ID (Note 1) (Continuous) (mA) ID (Pulsed) (A) Power Dissipation at TA = 25°C (W) IDR (mA) IDRM (Note 1) (A) 3-lead TO-92 30 30 0.74 30 30 3-lead SOT-23 13 30 0.36 13 30 3-lead SOT-89 30 30 1.6 (Note 2) 30 30 Note 1: ID (continuous) is limited by maximum rated TJ. 2: TA = 25°C. Mounted on an FR4 Board, 25 mm x 25 mm x 1.57 mm. 2018 Microchip Technology Inc. DS20005454A-page 3 LND150/LND250 |
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