MJE18006 datasheet(3/10 Pages) ONSEMI

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MJE18006 MJF18006

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

0.01

100

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 5 Volts

Figure 3. Collector Saturation Region

Figure 4. Collector–Emitter Saturation Voltage

Figure 5. Base–Emitter Saturation Region

Figure 6. Capacitance

100

0.01

0.1

0.01

IB, BASE CURRENT (AMPS)

0.01

IC COLLECTOR CURRENT (AMPS)

0.1

1.3

0.8

0.4

0.01

IC, COLLECTOR CURRENT (AMPS)

0.1

1000

100

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1000

0.1

10000

0.1

TJ = 25°C

TJ = – 20°C

VCE = 1 V

TJ = 125°C

TJ = 25°C

TJ = – 20°C

VCE = 5 V

IC/IB = 10

IC/IB = 5

1.1

0.9

0.6

0.5

1.5

1.2

TJ = 25°C

IC = 1 A

3 A

5 A

6 A

TJ = 25°C

TJ = 125°C

TJ = 25°C

TJ = 125°C

IC/IB = 5

IC/IB = 10

2 A

100

0.7

Cib

Cob

TYPICAL STATIC CHARACTERISTICS

TJ = 25°C

f = 1 MHz

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