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2N3799 Datasheet(PDF) 2 Page - Silicon Supplies

Part # 2N3799
Description  PNP Transistor Bare Die
PDF  3 Pages
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Manufacturer  SS [Silicon Supplies]
Direct Link  https://siliconsupplies.com/
Logo SS - Silicon Supplies

2N3799 Datasheet(HTML) 2 Page - Silicon Supplies

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Absolute Maximum Ratings T
A = 25°C unless otherwise stated
Rev 1.0
08/01/19
PNP Transistor Bare Die, 2N3799
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-65
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-50
mA
Junction Temperature
TJ
200
°C
Storage Temperature
Tstg
-55 to 150
°C
 
 P
 
 
 
 
 
 
 
 
 
 
 
 
 
 
` 
 
ARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(BR)CBO
IC = -10µA, IE = 0
-60
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = -10mA, IB = 0
-60
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = -10µA, IC = 0
-5
-
-
V
VCB = -50V, IE = 0
-
-
-0.01
µA
Collector Cut-off Current
ICBO
VCB = -50V, IE = 0, TA = 150°C
-
-
-10
µA
Emitter Cut-off Current
IEBO
VEB = -4V, IC = 0
-
-
-20
nA
ON CHARACTERISTICS
VCE = -5V, IC = -1µA
75
-
-
-
VCE = -5V, IC = -10µA
225
-
-
-
VCE = -5V, IC = -100µA
300
-
-
-
VCE = -5V, IC = -100µA, TA = -55°C
150
-
-
-
VCE = -5V, IC = -500µA
300
-
900
-
VCE = -5V, IC = -1mA
300
-
-
-
Forward-Current Transfer Ratio
1
hFE
VCE = -5V, IC = -10mA
250
-
-
-
IC = -100µA, IB = -10µA
-
-
-0.2
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = -1mA, IB = -100µA
-
-
-0.25
V
IC = -100µA, IB = -10µA
-
-
-0.7
V
Base-Emitter Saturation Voltage
VBE(sat)
IC = -1mA, IB = -100µA
-
-
-0.8
V
Base-Emitter On Voltage
VBE(on)
IC = -100µA, VCE = 5V
-
-
-0.7
V
SMALL SIGNAL CHARACTERISTICS
2
VCE = -5V, IC = -500µA, f = 30 MHz
30
-
-
MHz
Transition Frequency
3
fT
VCE = -5V, IC = -1mA, f = 100 MHz
-
80
-
MHz
Output Capacitance
Cobo
VCB = -5V, IE = 0, f = 100 kHz
-
-
5
pF
Input Capacitance
Cibo
VBE = -0.5V, IC = 0, f = 100 kHz
-
-
15
pF
Input Impedance
hie
VCE= -10V, IC = -1mA, f = 1 kHz
10
-
40
kΩ
Voltage Feedback Ratio
hre
VCE= -10V, IC = -1mA, f = 1 kHz
-
-
25
x 10
-4
Small-Signal Current Gain
hfe
VCE= -10V, IC = -1mA, f = 1 kHz
300
-
900
Output Admittance
hoe
VCE= -10V, IC = -1mA, f = 1 kHz
5
-
60
µm
hos
 
Electrical Characteristics T
A = 25°C unless otherwise stated
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