6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Voltage

13

V

Supply turn-on/turn-off maximum dV/dT(2)

1

V/µs

Input-output voltage range

V

Differential input voltage

0.7

Current

Continuous input current(3)

±10

mA

Continuous output current(4)

±20

Temperature

Continuous power dissipation

See Thermal Information

150

°C

–40

125

–65

150

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

Stay below this ± supply turn-on edge rate to make sure that the edge-triggered ESD absorption device across the supply pins remains

off.

(3)

Continuous input current limit for both the ESD diodes to supply pins and amplifier differential input clamp diode. The differential input

clamp diode limits the voltage across it to 0.7 V with this continuous input current flowing through it.

(4)

Long-term continuous current for electromigration limits.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

V

Charged device model (CDM), per JEDEC specificationJESD22-C101(2)

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Single-supply positive voltage

3

10

12.6

V

Ambient temperature

–40

25

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

OPA862

UNIT

D (SOIC)

DTK (WSON)

8 PINS

8 PINS

Junction-to-ambient thermal resistance

125.7

65.8

°C/W

Junction-to-case (top) thermal resistance

65.9

56.7

°C/W

Junction-to-board thermal resistance

69.1

34.4

°C/W

Junction-to-top characterization parameter

18

1.6

°C/W

Junction-to-board characterization parameter

68.3

34.4

°C/W

Junction-to-case (bottom) thermal resistance

N/A

8.8

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

OPA862

SBOS919C – AUGUST 2019 – REVISED AUGUST 2020

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