WSF80N06 datasheet(4/6 Pages) WIINSOK

4 / 6 page

N-Ch MOSFET

WSF80N06

Page 4

www.winsok.tw

Dec.2014

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

V DS , Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance Characteristics

V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

t , Pulse Width (s)

Fig 10. Effective Transient Thermal Impedance

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

4.5V

QGS

QGD

Charge

1000

2000

3000

4000

f=1.0MHz

C iss

C oss

C rss

I D = 30 A

V DS =48V

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

100

1000

0.1

100

1000

T C =25

o C

Single Pulse

100us

1ms

10ms

100ms

100

T j =150

o C

T j =25

o C

V DS =5V

Operation in this area

limited by RDS(ON)

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