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WSP08N10 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSP08N10
Description  N-Ch MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP08N10 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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background image
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Sou
rce Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
1
7.0
A
ID@TC=70℃
Continuous Drain Current, VGS @ 10V
1
5.5
A
IDM
Pulsed Drain Current
2
28
A
EAS
Single Pulse Avalanche Energy
3
60
mJ
IAS
Avalanche Current
9
A
PD@TA=25℃
Total Power Dissipation
4
2.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-ambient
1
---
50
℃
/W
RθJC
Thermal Resistance Junction-Case
1
---
24
℃
/W
BVDSS
RDSON
ID
100V
39mΩ
7.0A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
General Description
Features
Applications
Power Management in DC/DC Converter.
Absolute Maximum Ratings
Thermal Data
SOP
-8 Pin Configuration
Product Summery
N-Ch MOSFET
WSP08N10
Page 1
www.winsok.tw
Dec.2014
The WSP08N10 is the highest performance
trench N-Ch MOSFET with extreme high cell
density , which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications .
The WSF08N10 meet the RoHS and Green
Product requirement , 100% EAS
guaranteed with full function reliability
approved.


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