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WSP08N10 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSP08N10
Description  N-Ch MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP08N10 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSP08N10 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP08N10 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP08N10 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP08N10 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP08N10 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
7A
---
m
Ω
VGS=4.5V , ID=
4A
---
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
2.0
3.0
4.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.52
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
10
uA
VDS=80V , VGS=0V , TJ=55℃
---
---
100
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.6
3.2
Ω
Qg
Total Gate Charge (10V)
VDS=
80V , VGS=10V , ID=7A
---
40
---
nC
Qgs
Gate-Source Charge
---
6
---
Qgd
Gate-Drain Charge
---
7
---
Td(on)
Turn-On Delay Time
VDD=
30V , VGEN=10V , RG=6Ω
ID=
1A ,RL=30Ω
---
11
20
ns
Tr
Rise Time
---
9
17
Td(off)
Turn-Off Delay Time
---
60
113
Tf
Fall Time
---
30
56
Ciss
Input Capacitance
VDS=
30V , VGS=0V , f=1MHz
---
1600
---
pF
Coss
Output Capacitance
---
120
---
Crss
Reverse Transfer Capacitance
---
75
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.
3mH , IAS=9A
50
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
6
A
ISM
Pulsed Source Current
2,6
---
---
28
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
6A , TJ=25℃
---
---
1.
1
V
trr
Reverse Recovery Time
IF=
7A , dI/dt=100A/µs , TJ=25℃
---
61
---
nS
Qrr
Reverse Recovery Charge
---
127
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.
3mH,IAS=9A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
39
44
51
57
N-Ch MOSFET
WSP08N10
Page 2
www.winsok.tw
Dec.2014



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