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WSP4626 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSP4626 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 8 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V VGS= 4.5V , ID=6A --- 21 28 RDS(ON) Static Drain-Source On-Resistance VGS= 2.5V , ID=5.2A --- 28 38 m Ω VGS(th) Gate Threshold Voltage 0.4 0.72 1.2 V VGS=VDS , ID =250uA VDS= 20V , VGS=0V . --- --- 1 Drain-Source Leakage Current uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA Qg Total Gate Charge --- 10 --- Qgs Gate-Source Charge --- 1.4 --- Qgd Gate-Drain Charge VDS= 10V,VGS=4.5V,ID=6.5A. --- 3.2 --- nC Td(on) Turn-On Delay Time --- 14 --- Tr Rise Time --- 10 --- Td(off) Turn-Off Delay Time --- 34 --- Tf Fall Time VDD=1 5V,VGS=4.5V,RG=6Ω, ID= 1A . --- 11 --- ns Ciss Input Capacitance --- 910 --- Coss Output Capacitance --- 230 --- Crss Reverse Transfer Capacitance VDS=15V ,VGS=0V,f=1MHz . --- 163 --- pF IS Continuous Source Current --- --- 2.6 A VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=1A. --- --- 1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Page 2 www.winsok.tw Dec.2014 WSP4626 N-Ch and P-Channel MOSFET IDSS |
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