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BAS31 Datasheet(PDF) 2 Page - ON Semiconductor |
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BAS31 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() www.onsemi.com 2 Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit PD Power Dissipation 350 mW RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W Symbol Parameter Conditions Min. Max. Unit VR Breakdown Voltage IR = 1.0 mA 120 V VF Forward Voltage IF = 10 mA 750 mV IF = 50 mA 840 mV IF = 100 mA 900 mV IF = 200 mA 1.00 V IF = 400 mA 1.25 V IR Reverse Current VR = 90 V 100 nA VR = 90 V, TA = 150°C 100 μA CT Total Capacitance VR = 0, f = 1.0 MHz 35 pF trr Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω 50 ns |
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