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WSP6024 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSP6024 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 8 page  Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Sou rce Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 1 15 A ID@TC=70℃ Continuous Drain Current, VGS @ 10V 1 9.6 A IDM a Pulsed Drain Current 2 43 A EASb Single Pulse Avalanche Energy 3 81 mJ IASb Avalanche Current 16 A PD@TA=25℃ Total Power Dissipation 4 1.78 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range 150 ℃ Symbol Parameter Typ. Max. Unit RθJAc Thermal Resistance Junction-ambient 1 --- 72 ℃ /W RθJC Thermal Resistance Junction-Case 1 --- 1.2 ℃ /W BVDSS RDSON ID 60V 8mΩ 15A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data SOP -8 Pin Configuration Product Summery WSP6024 Page 1 www.winsok.tw Dec.2014 The WSP6024 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSP6024meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. N-Channel MOSFET Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Note c：Surface Mounted on 1in2 pad area. |
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