Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

WSP6024 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSP6024
Description  N-Channel MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP6024 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSP6024 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP6024 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP6024 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP6024 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP6024 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP6024 Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP6024 Datasheet HTML 7Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP6024 Datasheet HTML 8Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.044
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
13A
---
8
10
m
Ω
VGS=4.5V , ID=
8A
---
11
13.7
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
2.0
3.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.
6
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=
60V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=
60V , VGS=0V , TJ=55℃
---
---
100
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Qg
Total Gate Charge (10V)
VDS=
30V , VGS=10V , ID=6A
---
25.4
---
nC
Qgs
Gate-Source Charge
---
4.6
---
Qgd
Gate-Drain Charge
---
3.8
---
Td(on)
Turn-On Delay Time
VDD=30V , VGEN=10V ,
RG=
6Ω ID=1A ,RL=30Ω
---
15
ns
Tr
Rise Time
---
7
---
Td(off)
Turn-Off Delay Time
---
34
---
Tf
Fall Time
---
30
---
Ciss
Input Capacitance
VDS=
30V , VGS=0V , f=1MHz
---
1500
---
pF
Coss
Output Capacitance
---
280
---
Crss
Reverse Transfer Capacitance
---
40
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.
3
V
trr
Reverse Recovery Time
IF=
6.0A , dI/dt=100A/µs , TJ=25℃
---
30
---
nS
Qrr
Reverse Recovery Charge
---
29
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Page 2
www.winsok.tw
Dec.2014
WSP6024
N-Channel MOSFET
---
Note d：Pulse test ; pulse width≤300ms, duty cycle≤2%.
Note e：Guaranteed by design, not subject to production testing.



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com