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WST2078 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WST2078
Description  N&P-Ch MOSFET
PDF  8 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST2078 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.024
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V , ID=
5A
---
30
38
m
Ω
VGS=2.5V , ID=
4A
---
40
54
VGS=1.8V , ID=1A
60
85
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.
5
0.
7
1
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-2.51
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=3A
---
10
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.2
3.4
Ω
Qg
Total Gate Charge (4.5V)
VDS=1
0V , VGS=10V , ID=5A
---
9
---
nC
Qgs
Gate-Source Charge
---
0.3
---
Qgd
Gate-Drain Charge
---
2
---
Td(on)
Turn-On Delay Time
VDD=10V , VGEN=4.5V , RG=6Ω
ID=3A
RL=10Ω
---
2.4
4.3
ns
Tr
Rise Time
---
13
23
Td(off)
Turn-Off Delay Time
---
15.5
28
Tf
Fall Time
---
3
5.5
Ciss
Input Capacitance
VDS=1
0V , VGS=0V , f=1MHz
---
275
---
pF
Coss
Output Capacitance
---
70
---
Crss
Reverse Transfer Capacitance
---
60
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source-Drain Diode Current
1,4
VG=VD=0V , Force Current
---
---
1.0
A
ISM
Pulsed Diode Forward Current
2,4
---
20
---
A
VSD
Body Diode Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.
1
V
trr
Reverse Recovery Time
IF=
5A , dI/dt=100A/µs , TJ=25℃
---
10.5
---
nS
Qrr
Reverse Recovery Charge
---
3.2
---
nC
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Drain-Source Body Diode Characteristics
WST2078
N&P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014



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