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M62023P Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M62023P Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 4 page ![]() MITSUBISHI <Dig./Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP M62023L,P,FP 1997.5.30- rev ( / ) PRELIMINARY PRELIMINARY Notice:This is not a final specification. Some parametric limits are subject to change. VBAT Com 1.24V 3 R1 R2 7 5 VIN RES RES MCU or CPU +3V (MAIN POWER SUPPLY) VDD CIN GND RESET CIRCUIT SW DELAY CIRCUIT 6 M62023 D1 1 8 4 2 VOUT VBAT CS Ct VDD BATTERY 3V CMOS RAM COUT Ct EXPLANATION OF TERMINALS VIN and VBAT are controlled by means of an internal switch and output through VOUT. The pin is capable of outputting up to 100 mA. Use it as VDD of CMOS RAM and the like. Backup power supply is connected to this pin. If a lithium battery is used, insert a resistor in series for safety purposes. +3V input pin. Connect to a logic power supply. A delay capacitor is connected to this pin. By connecting a capacitor, it is possible to delay each output. Connect to the positive reset input of a microcontroller. The pin is capable of flowing 1mA sink current. Reference for all signals Connect to the negative reset input of a microcontroller. The pin is capable of flowing 1mA sink current. Connect to the chip select of RAM. The CS output is at low level in normal state thereby letting RAM be active. Under failure or backup condition, the CS output is set to high level, then RAM enters standby state disabling read/write function. The pin is capable of flowing a 1mA sink current. Power supply output Backup power supply input Pin No. Name Function VIN Power supply input Delay capacitor connection pin Positive reset output Ground Negative reset output Chip select output 1 2 3 4 5 6 7 8 Symbol VOUT Ct RES GND CS RES APPLICATION EXAMPLE Capacitance to be connected: CIN: 10µF; COUT: 4.7µF; Ct: 4.7µF 3 4 |
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