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WST6003 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WST6003
Description  P-Ch MOSFET
PDF  6 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST6003 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.016
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-
0.35A
---
0.8
1.2
VGS=-2.5V , ID=-
0.3A
---
1.2
1.6
VGS=-1.8V , ID=-
0.01A
1.8
2.7
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.
45
---
---
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
3.97
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-
1A
---
6.2
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
9.5
12
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-
1A
---
1500
---
pC
Qgs
Gate-Source Charge
---
150
---
Qgd
Gate-Drain Charge
---
450
---
Td(on)
Turn-On Delay Time
VDD=-15V , VGS=-4.5V ,
RG=3.3Ω ID=-
1A
---
5
---
ns
Tr
Rise Time
---
9
---
Td(off)
Turn-Off Delay Time
---
35
---
Tf
Fall Time
---
11
---
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WST6003
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
---
Ω
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.



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