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WST6006 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WST6006 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 7 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.05 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=0. 5A --- 1.4 7.5 Ω VGS= 5V , ID=0.05A --- 10.5 13.5 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 1.6 2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -3.7 --- mV/℃ IDSS Drain-Source Leakage Current VDS=60V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=60V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 10 uA gfs Forward Transconductance VDS≥ 2.0 VDS(on), ID = 200 mAdc) --- 80 --- mS Td(on) Turn-On Delay Time --- 7 6 ns Tr Rise Time --- 1.8 3.3 Td(off) Turn-Off Delay Time --- 11 40 Tf Fall Time --- 6.8 13.6 Ciss Input Capacitance VDS = 25 Vdc, VGS = 0, f = 1.0 MHz --- 17 pF Coss Output Capacitance --- 10 Crss Reverse Transfer Capacitance --- 2.5 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 115 mA ISM Pulsed Source Current 2,4 --- --- 800 VSD Diode Forward Voltage 2 IS = 115 mAdc, VGS = 0 V --- --- 1.5 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics N-Ch MOSFET Page 2 www.winsok.tw Dec.2014 WST6006 (VDD = 25 Vdc , ID =500 mAdc, RG = 25 ,RL = 50 ,Vgen = 10 V) mA --- --- --- |
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