WST6008 datasheet(1/6 Pages) WIINSOK

Part #	WST6008

Description	N-Ch MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

Direct Link	http://www.winsok.tw/index.html

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1 / 6 page

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Sou

rce Voltage

±

10

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V

1

300

mA

ID@TA=70℃

Continuous Drain Current, VGS @ 10V

1

250

mA

IDM

Pulsed Drain Current

2

1500

mA

PD@TA=25℃

Total Power Dissipation

3

300

mW

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-Ambient

1

---

℃

/W

BVDSS

RDSON

ID

30V

140mΩ

300mA

General Description

Features

Applications

Power Management Load Switch

Level Shift

Portable Applications such as Cell Phones, Media

Players, Digital Cameras, PDA’s, Video Games,

Hand Held Computers, etc.

Absolute Maximum Ratings

Thermal Data

SOT

-523 Pin Configuration

Product Summery

N-Ch MOSFET

Page 1

www.winsok.tw

Dec.2014

WST6008

The WST6008 is the highest performance

trench N-Ch MOSFET with extreme high cell

density , which provide excellent RDSON and

gate charge for most of the small power

switching and load switch applications.

The WST6008 meet the RoHS and

Green Product requirement with full

function reliability approved.

• Low Gate Charge for Fast Switching

•

Small 1.6 X 1.6 mm Footprint

ESD Protected Gate

We declare that the material of product is ROHS

compliant

and halogen free.

416

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WST6008 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

WST6008 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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