MPS2907A

http://onsemi.com

2

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (Note 1.)

(IC = –10 mAdc, IB = 0)

V(BR)CEO

–60

–

Vdc

Collector–Base Breakdown Voltage

(IC = –10 mAdc, IE = 0)

V(BR)CBO

–60

–

Vdc

Emitter–Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

V(BR)EBO

–5.0

–

Vdc

Collector Cutoff Current

(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)

ICEX

–

–50

nAdc

Collector Cutoff Current

(VCB = –50 Vdc, IE = 0)

(VCB = –50 Vdc, IE = 0, TA = 150°C)

ICBO

–

–

–0.01

–10

µAdc

Base Current

(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)

IB

–

–50

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = –0.1 mAdc, VCE = –10 Vdc)

(IC = –1.0 mAdc, VCE = –10 Vdc)

(IC = –10 mAdc, VCE = –10 Vdc)

(IC = –150 mAdc, VCE = –10 Vdc) (Note 1.)

(IC = –500 mAdc, VCE = –10 Vdc) (Note 1.)

hFE

75

100

100

100

50

–

–

–

300

–

–

Collector–Emitter Saturation Voltage (Note 1.)

(IC = –150 mAdc, IB = –15 mAdc)

(IC = –500 mAdc, IB = –50 mAdc)

VCE(sat)

–

–

–0.4

–1.6

Vdc

Base–Emitter Saturation Voltage (Note 1.)

(IC = –150 mAdc, IB = –15 mAdc)

(IC = –500 mAdc, IB = –50 mAdc)

VBE(sat)

–

–

–1.3

–2.6

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product (Notes 1. and 2.),

(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)

fT

200

–

MHz

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

–

8.0

pF

Input Capacitance

(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)

Cibo

–

30

pF

SWITCHING CHARACTERISTICS

Turn–On Time

(VCC = –30 Vdc, IC = –150 mAdc,

I

15

Ad ) (Fi

1

d 5)

ton

–

45

ns

Delay Time

CC

C

IB1 = –15 mAdc) (Figures 1 and 5)

td

–

10

ns

Rise Time

tr

–

40

ns

Turn–Off Time

(VCC = –6.0 Vdc, IC = –150 mAdc,

I

I

15

Ad ) (Fi

2)

toff

–

100

ns

Storage Time

CC

C

IB1 = IB2 = 15 mAdc) (Figure 2)

ts

–

80

ns

Fall Time

tf

–

30

ns

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.