PMEM4010PD datasheet(4/12 Pages) PHILIPS

4 / 12 page

2002 Oct 28

Philips Semiconductors

Product speciﬁcation

PNP transistor/Schottky diode module

PMEM4010PD

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

NPN transistor

ICBO

collector-base cut-off current

VCB = −40 V; IE =0

−−−100

VCB = −40 V; IE =0;

Tamb = 150 °C

−−−50

µA

ICEO

collector-emitter cut-off current

VCE = −30 V; IB =0

−−−100

IEBO

emitter-base cut-off current

VEB = −5 V; IC =0

−−−100

hFE

DC current gain

VCE = −5 V; IC = −1 mA

300

−−

VCE = −5 V; IC = −100 mA

300

−

800

VCE = −5 V; IC = −500 mA

250

−−

VCE = −5 V; IC = −1 A

160

−−

VCEsat

collector-emitter saturation voltage

IC = −100 mA; IB = −1mA

−−−140

IC = −500 mA; IB = −50 mA

−−−170

IC = −1 A; IB = −100 mA

−−−310

VBEsat

base-emitter saturation voltage

IC = −1 A; IB = −50 mA

−−−1.1

RCEsat

equivalent on-resistance

IC = −500 mA; IB = −50 mA;

note 1

−

300

<340

Ω

VBEon

base-emitter turn-on voltage

VCE = −5 V; IC = −1A

−−−1V

transition frequency

IC = −50 mA; VCE = −10 V;

f = 100 MHz

150

−−

MHz

Schottky barrier diode

continuous forward voltage

IF = 10 mA; note 1

−

240

270

IF = 100 mA; note 1

−

300

350

IF = 1000 mA; see Fig.7; note 1

−

480

550

reverse current

VR = 5 V; note 1

−

510

µA

VR = 8 V; note 1

−

720

µA

VR = 15 V; see Fig.8; note 1

−

µA

diode capacitance

VR = 5 V; f = 1 MHz; see Fig.9

−

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