2002 Oct 28

3

Philips Semiconductors

Product specification

PNP transistor/Schottky diode module

PMEM4010PD

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

THERMAL CHARACTERISTICS

Note

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

NPN transistor

collector-base voltage

open emitter

−−40

V

collector-emitter voltage

open base

−−40

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−1A

peak collector current

−−2A

peak base current

−−1A

junction temperature

−

150

°C

Schottky barrier diode

continuous reverse voltage

−

20

V

continuous forward current

−

1A

non repetitive peak forward current

t = 8.3 ms half sinewave;

JEDEC method

−

5A

junction temperature

−

125

°C

Combined device

total power dissipation

−

600

mW

storage temperature

−65

+150

°C

operating ambient temperature

−65

+125

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air; note 1

208

K/W