2.2

Electrical characteristics

@ Vdd = 2.8 V, T = 25 °C unless otherwise noted.

Symbol

Parameter

Test condition

Min.

Typ. (1)

Max.

Unit

Vdd

Supply voltage

1.71

2.8

3.6

V

Vdd_IO

I/O pins supply voltage

1.71

Vdd+0.1

V

Idd

Supply current

2.5

5

mA

Digital high-level input voltage

0.7*Vdd_IO

V

Digital low-level input voltage

0.3*Vdd_IO

V

High-level output voltage

Vdd_IO - 0.2

V

Low-level output voltage

0.2

V

Top

Operating temperature range

-40

+85

°C

SPI_Fr

SPI frequency

4-wire interface

5

10

MHz

Trise

Time for power supply to rise(3)

0.01

100

ms

Twait

Time delay between Vdd_IO and Vdd(3)

0

10

ms

1. Typical specifications are not guaranteed.

2. 4 mA is the maximum driving capability, i.e. the maximum DC current that can be sourced/sunk by the digital

3. Please refer to Figure 2. Recommended power-up sequence for more details.

2.2.1

Recommended power-up sequence

For the power-up sequence please refer to the following figure, where:

•

Trise is the time for the power supply to rise from 10% to 90% of its final value

•

Twait is the time delay between the end of the Vdd_IO ramp (90% of its final value) and the start of the Vdd

ramp

In the power-down sequence Vdd and Vdd_IO can come down in any order.

Trise

Twait

Trise

0V

0V

Vdd_IO

Vdd

IIS3DHHC

Electrical characteristics

DS12292 - Rev 3

page 4/30