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1

Gain Block

PW119

Products and product information are subject to change without notice. Version 10

Description

The PW119 is a high performance InGaP HBT MMIC Amplifier and

consists of Darlington pair amplifiers. The features of PW119 are

high linear performance, high reliability as an IF amplifier and provide

stable current variation over temperature. The PW119 operates from

a single voltage supply and requires only two DC-blocking capacitors,

a bias resistor and an inductor for operation. The device is a general

purpose buffer amplifier that offers high dynamic range in a low cost

surface-mounted plastic SOT-89 package. All devices are 100% RF

and DC tested.

Specifications for Vd=4.65V, Ic=115mA

1) Test Conditions : T=25°C, Supply Voltage=5V, Rbias=2.4ohm, 50ohm System

2) OIP3 measured with two tones at an output power of 9dBm/tone separated by 1MHz.

Absolute Maximum Ratings

Parameter

Rating

Unit

Device Voltage

7.5

V

Device Current

240

mA

RF Power Input

10

dBm

Storage Temperature

-55 to 150

°C

Ambient Operating Temperature

-40 to 85

°C

Junction Temperature

187

°C

Parameter

Units

Frequency (MHz)

70

140

250

500

S21

dB

22.3

22.2

22.0

21.6

S11

dB

-23

-30

-25

-20

S22

dB

-25

-25

-18

-12

P1dB

dBm

20.6

20.6

20.5

20.3

OIP3

dBm

42.1

41.0

39.5

36.5

NF

dB

2.9

2.9

2.9

2.9

V / I

V/mA

4.65/115

Rth

°C/W

58

Specifications for Vd=4.25V, Ic=87mA

1) Test Conditions : T=25°C, Supply Voltage=5V, Rbias=7.5ohm, 50ohm System

2) OIP3 measured with two tones at an output power of 9dBm/tone separated by 1MHz.

Parameter

Units

Frequency (MHz)

70

140

250

500

S21

dB

22.1

22.1

21.8

21.3

S11

dB

-22

-30

-25

-18

S22

dB

-25

-26

-18

-12

P1dB

dBm

19.2

19.3

19.3

19.2

OIP3

dBm

39.5

38.8

37.5

34.5

NF

dB

2.6

2.7

2.8

2.9

V / I

V/mA

4.25 / 87

Rth

°C/W

58

Features

• 5 to 500MHz

• Gain 22.3dB @ 70MHz

• P1dB 20.6dBm @ 140MHz

• OIP3 42.1dBm @ 70MHz

• Lead-free / Green /

compliant SOT-89 Package

Applications

ESD/MSL

1 ESD sensitive device. Observe

handling precautions.

2 HBM: Class 1C, JESD22-A114

3 CDM: Class C3 , JESD22-

C101F

4 MSL 3, J-STD-020

• Base station / Repeater / Mobile

/ Automotive / Military

– FDD-LTE, TD-LTE, TDS-CDMA,

CDMA, WCDMA,WiMAX, PCS, GSM,

GPS, GPRS, TETRA

• IoT / Broadcasting / WLAN

– FM, DMB, DVB, ISM

Functional Diagram

RF IN

GND

1

2,4

RF OUT / Bias

3

1) Stresses above the maximum values listed have may cause permanent damage to the device.

2) MTTF is more than 100 years.

4

1

2

3