MPSW05 MPSW06

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 250 mAdc, VCE = 1.0 Vdc)

hFE

80

60

—

—

—

Collector – Emitter Saturation Voltage

(IC = 250 mAdc, IB = 10 mAdc)

VCE(sat)

—

0.4

Vdc

Base–Emitter Saturation Voltage

(IC = 250 mAdc, VCE = 5.0 Vdc)

VBE(sat)

—

1.2

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

fT

50

—

MHz

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

—

12

pF

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

200

100

80

60

40

TJ = 125°C

25

°C

–55

°C

VCE = 1.0 V

300

500

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

1.0

0.8

0.6

0.4

0.2

0

0.1

10

1.0

TJ = 25°C

IC = 10 mA

0.05

0.2

0.5

2.0

5.0

20

100 mA

250 mA

50

mA

50

500 mA

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

1.0

0.8

0.6

0.4

0.2

0

0.5

1.0

200

20

TJ = 25°C

VBE(on) @ VCE = 1.0 V

VCE(sat) @ IC/IB = 10

5.0

10

50

100

VBE(sat) @ IC/IB = 10

2.0

500