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P0170AI Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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P0170AI Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 5 page  P0170AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3V DD = 50V , Starting TJ = 25 ° C Pulsed Drain Current 1, 2 IDM ID Drain-Source Voltage Junction-to-Case °C / W RqJC THERMAL RESISTANCE RDS(ON) TC = 100 °C PARAMETERS/TEST CONDITIONS Gate-Source Voltage ID Continuous Drain Current 2 TC = 25 °C 700V 15Ω @VGS = 10V 1A 4 TC = 25 °C TC = 100 °C 0.9 Avalanche Current 3 Avalanche Energy 3 L = 10mH PD IAS mJ W Power Dissipation A EAS 11 27.6 TJ, TSTG 4.53 110 TYPICAL °C -55 to 150 RqJA Junction-to-Ambient Operating Junction & Storage Temperature Range SYMBOL MAXIMUM UNITS 3 0.6 1 ±30 A LIMITS SYMBOL VGS VDS 700 V Ver 1.0 1 2012/4/16 |
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