P0170AI datasheet(2/5 Pages) UNIKC

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P0170AI

N-Channel Enhancement Mode MOSFET

MIN

TYP

MAX

700

2.5

3.6

4.5

±250

10.7

166

3.2

1.4

200

0.31

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

Reverse Recovery Charge

Continuous Current

Forward Voltage

Turn-On Delay Time

Rise Time

Reverse Recovery Time

Turn-Off Delay Time

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

IF = 1A, VGS = 0V

IF = 1A, dlF/dt = 100A / mS VGS = 0V

VDD = 350V, ID = 1A, RG= 25Ω

Qgd

trr

Qrr

VSD

td(off)

td(on)

VDS = 10V, ID = 0.5A

Forward Transconductance

VGS = 0V, VDS = 25V, f = 1MHz

Zero Gate Voltage Drain Current

STATIC

LIMITS

UNIT

VDD = 560V, ID = 1A, VGS = 10V

Gate-Source Charge

Gate-Drain Charge

PARAMETER

SYMBOL

TEST CONDITIONS

gfs

Qgs

Total Gate Charge

Crss

Reverse Transfer Capacitance

Output Capacitance

Ciss

Coss

Input Capacitance

DYNAMIC

Drain-Source On-State

Resistance

IGSS

IDSS

RDS(ON)

Gate-Body Leakage

VDS = 560V, VGS = 0V , TC = 100 °C

Gate Threshold Voltage

Drain-Source Breakdown Voltage

VGS = 10V, ID = 0.5A

VGS(th)

VGS = 0V, ID = 250mA

V(BR)DSS

VDS = 700V, VGS = 0V , TC = 25 °C

VDS = VGS, ID = 250mA

VDS = 0V, VGS = ±30V

Ver 1.0

2012/4/16

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