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IXTH12N50A Datasheet(PDF) 3 Page - IXYS Corporation |
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IXTH12N50A Datasheet(HTML) 3 Page - IXYS Corporation |
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3 / 4 page ![]() IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 I XYS reserves the right to change limits, test conditions, and dimensions. IXTH 12N50A IXTM 12N50A T J - Degrees C -50 -25 0 25 50 75 100 125 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 V GS(th) T C - Degrees C -50 -25 0 25 50 75 100 125 150 0.0 2.5 5.0 7.5 10.0 12.5 15.0 T J - Degrees C -50 -25 0 25 50 75 100 125 150 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 I D - Amperes 0 5 10 15 20 25 0.8 0.9 1.0 1.1 1.2 1.3 1.4 V GS = 15V V GS - Volts 012 34567 89 10 0 5 10 15 20 25 V DS - Volts 0 5 10 15 20 0 5 10 15 20 25 6V 5V 7V BV DSS 12N50A I D = 6A V GS = 10V V GS = 10V T J = 25°C T J = 25°C T J = 25°C Fig. 1 Output Characteristics Fig. 2 Input Admittance Fig. 3 R DS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of Case Temperature Breakdown and Threshold Voltage |
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