IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072

4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

V

0.00

0.25

0.50

0.75

1.00

1.25

1.50

0

5

10

15

20

25

Time - Seconds

0.00001

0.0001

0.001

0.01

0.1

1

10

0.01

0.10

1.00

D = 0.2

D=0.02

D = 0.5

D = 0.1

D = 0.05

D=0.01

Single Pulse

V

0

5

10

15

20

25

0

500

1000

1500

2000

2500

3000

3500

4000

C

rss

C

oss

C

iss

Gate Charge - nCoulombs

025

50

75

100

0

1

2

3

4

5

6

7

8

9

10

I

V

V

110

100

0.1

1

10

100

10µs

100µs

1ms

10ms

100ms

Limited by R

DS(on)

I

T

T

IXTH 12N50A

IXTM 12N50A

Fig.7 Gate Charge Characteristic Curve

Fig.8 Forward Bias Safe Operating Area

Fig.11 Transient Thermal Impedance

Fig.9 Capacitance Curves

Fig.10 Source Current vs. Source

to Drain Voltage