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PE552BA Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Part # PE552BA
Description  N-Channel Enhancement Mode MOSFET
PDF  5 Pages
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Manufacturer  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
Direct Link  http://www.unikc.com.cn/
Logo UNIKC - Wuxi U-NIKC Semiconductor CO.,LTD

PE552BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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PE552BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
THERMAL RESISTANCE RATINGS
UNITS
1Pulse width limited by maximum junction temperature.
2The value of Rq
JA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 22A.
Continuous Drain Current
3
TA = 25 °C
TA = 70 °C
ID
15
12
V
A
6.5
°C / W
19
47
70
mJ
Operating Junction & Storage Temperature Range
SYMBOL
°C
-55 to 150
60
UNITS
30
TYPICAL
VDS
20
SYMBOL
IDM
W
2
EAS
MAXIMUM
RqJC
VGS
LIMITS
TC = 25 °C
THERMAL RESISTANCE
Avalanche Energy
L =0.1mH
ID
3
Tc = 25 °C
20V
Tc = 100 °C
PARAMETERS/TEST CONDITIONS
RDS(ON)
Drain-Source Voltage
5mΩ @V
GS = 4.5V
47A
Gate-Source Voltage
±8
7
TA = 70 °C
1.3
TA = 25 °C
74.6
Avalanche Current
IAS
38.6
Junction-to-Ambient
2
Junction-to-Case
RqJA
Pulsed Drain Current
1
Power Dissipation
PD
TC = 100 °C
TJ, Tstg
REV 1.0
1
2014/8/28


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