PE552BA datasheet(2/5 Pages) UNIKC

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PE552BA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

0.4

0.7

0.9

±100

4.1

4.7

5.7

8.2

4407

469

381

0.7

180

1.3

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

Zero Gate Voltage Drain Current

IGSS

IF = 5A, dlF/dt = 100A / μS

UNITS

Coss

VGS = 4.5V, ID = 5A

STATIC

Drain-Source Breakdown Voltage

VDS = 5V, ID = 5A

VDS = 0V, VGS = ±8V

gfs

V(BR)DSS

TEST CONDITIONS

Forward Transconductance

VGS = 0V, VDS = 0V, f = 1MHz

Qgs

DYNAMIC

mΩ

VDS = 16V, VGS = 0V

Qgd

Ciss

IDSS

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

IF = 5A, VGS = 0V

VDD= 4.5V, ID @ 5A,

VGEN = 10V, RG= 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Threshold Voltage

Drain-Source On-State

Resistance

VDS = VGS, ID = 250mA

LIMITS

VGS=4.5V , VDS = 10V , ID = 5A

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Crss

VGS = 1.8V, ID = 5A

VDS = 10V, VGS = 0V, TJ = 55 °C

SYMBOL

Gate-Body Leakage

VGS(th)

RDS(ON)

VGS = 0V, ID = 250mA

VGS = 2.5V, ID = 5A

Input Capacitance

VGS = 0V, VDS = 10V, f = 1MHz

PARAMETER

Output Capacitance

REV 1.0

2014/8/28

PE552BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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