MAC4M, MAC4N

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance — Junction to Case

— Junction to Ambient

R

θJC

R

θJA

2.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

TL

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

—

—

—

—

0.01

2.0

mA

ON CHARACTERISTICS

Peak On-State Voltage(1)

(ITM = ± 6.0 A)

VTM

—

1.3

1.6

V

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

IGT

8.0

8.0

8.0

12

16

21

35

35

35

mA

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±200 mA)

IH

6.0

20

35

mA

Latching Current (VD = 12 V, IG = 35 mA)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

IL

—

—

—

25

40

20

60

80

60

mA

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

VGT

0.5

0.5

0.5

0.8

0.8

0.8

1.3

1.3

1.3

V

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/µs, Gate Open,

TJ = 125°C, f = 250 Hz, CL = 5.0 µF, LL = 20 mH, No Snubber)

(di/dt)c

6.0

8.4

—

A/ms

Critical Rate of Rise of Off-State Voltage

(VD = 0.67 x Rated VDRM, Exponential Waveform,

Gate Open, TJ = 125°C)

dv/dt

500

1500

—

V/

µs

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40

µsec; diG/dt = 200 mA/µsec; f = 60 Hz

di/dt

—

—

10

A/

µs

(1) Pulse Test: Pulse Width

≤ 2.0 ms, Duty Cycle ≤ 2%.