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PCK351DB Datasheet(PDF) 7 Page - NXP Semiconductors

Part # PCK351DB
Description  1:10 clock distribution device with 3-State outputs
PDF  17 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PCK351DB Datasheet(HTML) 7 Page - NXP Semiconductors

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Philips Semiconductors
PCK351
1:10 clock distribution device with 3-State outputs
Product data
Rev. 01 — 14 May 2002
7 of 17
9397 750 09791
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9.
Static characteristics
[1]
Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
Table 7:
DC characteristics
Over recommended operating conditions; voltages are referenced to GND (ground = 0 V). Tamb =25 °C.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIK
input diode voltage
VCC = 3.0 V; II = −18 mA
-
-
−1.2
V
VOH
HIGH-level output voltage
VCC = 3.0 V; IOH = −32 mA
2.0
-
-
V
VOL
LOW-level output voltage
VCC = 3.0 V; IOL = 32 mA
-
-
0.5
V
ILI
input leakage current
VCC = 3.6 V; VI = GND or 5.5 V
-
-
±1.0
µA
ILO
output leakage current
VCC = 3.6 V; VO = 2.5 V
−15
-
−150
mA
IOZ
3-State output OFF-state
current
VCC = 3.6 V; VO =3V
[1]
--
±10
µA
ICC
quiescent supply current
VCC = 3.6 V; VI =VCC or GND; IO =0;
outputs HIGH
-
-
0.3
mA
VCC = 3.6 V; VI =VCC or GND; IO =0;
outputs LOW
-
-
25
mA
VCC = 3.6 V; VI =VCC or GND; IO =0;
outputs disabled
-
-
0.3
mA
CI
input capacitance
VCC = 3.3 V; VI =VCC or GND;
f=10MHz
-4
-pF
CO
output capacitance
VCC = 3.3 V; VO =VCC or GND;
f=10MHz
-6
-pF



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