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LU024N Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part # LU024N
Description  N-Channel 60 V (D-S) MOSFET
PDF  7 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

LU024N Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Capacitance
On-Resistance vs. Junction Temperature
0.1
1
10
100
0.0
0.3
0.6
0.9
1.2
TJ = 25 °C
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
0
300
600
900
1200
1500
0
5
10
15
20
25
30
Ciss
Coss
Crss
VDS - Drain-to-Source Voltage (V)
0.5
0.8
1.1
1.4
1.7
2.0
- 50
- 25
0
25
50
75
100
125
150
175
ID =10A
VGS =4.5 V
VGS =10V
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
Current Derating
0.5
0.9
1.3
1.7
2.1
- 50
- 25
0
25
50
75
100
125
150
175
ID = 250 μA
TJ - Temperature (°C)
33
35
37
39
41
43
- 50
- 25
0
25
50
75
100
125
150
175
ID = 250 μA
TJ - Temperature (°C)
0
05
10
20
30
50
0
255075
100
125
150
Package Limited
TC - Case Temperature (°C)
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
LU024N
4



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