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LU024N Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Part # LU024N
Description  N-Channel 60 V (D-S) MOSFET
PDF  7 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

LU024N Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  LU024N Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd LU024N Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd LU024N Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd LU024N Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd LU024N Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd LU024N Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd LU024N Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Drain to Source Voltage vs. ID
Transfer Characteristics
Transconductance
0
05
10
15
20
50
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS =4 V
VGS = 10 V thru 5V
0
1
2
3
4
5
0
1
2
TC = 25 °C
TC = 125 °C
TC = - 55 °C
VGS - Gate-to-Source Voltage (V)
0
45
90
135
180
0
6
12
18
24
30
ID - Drain Current (A)
TC = 125 °C
TC = - 55 °C
TC = 25 °C
On-Resistance vs. Drain Current
On-Resistance vs. Gate-to-Source Voltage
Gate Charge
0.020
0.030
0.040
0.050
0.070
0
20
40
60
80
100
VGS =10V
VGS =4.5 V
ID - Drain Current (A)
0.020
0.030
0.040
0.050
0.060
0.070
246
8
10
TJ = 25 °C
TJ = 150 °C
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
0
10203040
50
ID =10A
VDS =30V
VDS =
V
VDS =48V
Qg - Total Gate Charge (nC)
24
3
4
5
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
LU024N
3



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