Lead-free Green

DS30657 Rev. 2 - 2

1 of 4

DMN601DMK

www.diodes.com

DMN601DMK

DUAL N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

Features

•

Dual N-Channel MOSFET

•

Low On-Resistance

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

Lead Free By Design/RoHS Compliant (Note 2)

•

ESD Protected Up To 2kV

•

"Green" Device (Note 4)

Maximum Ratings

°C unless otherwise specified

A

M

J

L

D

F

B C

H

K

Mechanical Data

S

1

D

1

D

2

S

2

G

1

G

2

•

Case: SOT-26

•

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals Connections: See Diagram

•

Terminals: Finish

⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

•

Marking: See Page 2

•

Ordering & Date Code Information: See Page 2

•

Weight: 0.015 grams (approximate)

Source

Body

Diode

EQUIVALENT CIRCUIT PER ELEMENT

Gate

Protection

Diode

Gate

Drain

ESD protectedupto2kV

Characteristic

Symbol

Value

Units

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Drain Current (Note 1)

Continuous

Pulsed (Note 3)

305

800

mA

Total Power Dissipation (Note 1)

225

mW

Thermal Resistance, Junction to Ambient

556

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width

≤10µS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SOT-26

Dim

Min

Max

Typ

A

0.35

0.50

0.38

B

1.50

1.70

1.60

C

2.70

3.00

2.80

D

⎯⎯

0.95

F

⎯⎯

0.55

H

2.90

3.10

3.00

J

0.013 0.10

0.05

K

1.00

1.30

1.10

L

0.35

0.55

0.40

M

0.10

0.20

0.15

α

0

°

8

°⎯

All Dimensions in mm