Notes:

5. Short duration test pulse used to minimize self-heating effect.

DS30657 Rev. 2 - 2

2 of 4

DMN601DMK

www.diodes.com

Electrical Characteristics

°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

60

⎯⎯

V

µA

Zero Gate Voltage Drain Current

⎯⎯

1

µA

Gate-Source Leakage

⎯⎯

±10

µA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.0

1.6

2.5

V

Static Drain-Source On-Resistance

⎯

⎯

⎯

2.4

4.0

Ω

Forward Transfer Admittance

100

⎯⎯

ms

Diode Forward Voltage (Note 5)

0.5

⎯

1.4

V

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯⎯

50

pF

f = 1.0MHz

Output Capacitance

⎯⎯

25

pF

Reverse Transfer Capacitance

⎯⎯

5.0

pF

0.1

D

Fig. 4 Static Drain-Source On-Resistance

Vs. Drain Current

1

10

0.001

0.01

0.1

1

T = 150

°C

A

T = 125

°C

A

T = 85

°C

A

T = -55

°C

A

T = 25

°C

A

T = 0

°C

A

T = -25

°C

A

V

= 10V

GS

Pulsed

T , CHANNEL TEMPERATURE (°C)

ch

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

0

0.5

1

1.5

2

-50

-25

0

25

50

75

100

125

150

V= 10V

DS

I = 1mA

D

Pulsed

V

, GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

0.01

0.10

1.00

1

1.5

2

2.5

33.5

4

4.5

5

T = 125

°C

A

T = 25

°C

A

T = -25

°C

A

T

= 75

°C

A

V

= 10V

DS

Pulsed

0

0.2

0.4

0.6

0.8

1.0

01

2

3

4

5

V

DS

Fig. 1 Typical Output Characteristics

1.2

1.4

3V

4V

6V

8V

10V

V

= 10V

GS

8V

6V

5V

4V

3V

5V